EPROM Datasheet, 16K EPROM Datasheet, buy MF1 NMOS uv EPROM: 8kx8. x 8 ORGANIZATION mW Max ACTIVE POWER, mW Max Details, datasheet, quote on part number: MF1. The NTE is a 16,–bit ( x 8–bit) Erasable and Electrically . After erasure and reprogramming of the EPROM, it is recommended that the quartz.
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The erasure time is increased by the square of the distance if the distance is doubled the erasure time goes up by a factor of 4.
IC Datasheet: 2716 EPROM – 1
Typical conditions are epro operation at: It is recommended that the MME be kept out of direct sunlight. The MME is packaged in a pin dual-in-line package with transparent lid.
Any or all of the 8 bits associated with an address location may be programmed wFth a single program pulse applied to the chip enable pin. This exposure discharges the floating gate to its initial state through induced photo current. The transparent lid allows datasueet user to expose the chip to ultraviolet light to erase the bit pattern. After the address and data signals are stable the program pin is pulsed from VI L to VIH with a pulse width between dxtasheet ms and 55 ms.
To prevent damage the device it must not be inserted into a board fprom power applied. In- complete erasure will cause symptoms that can be misleading. Extended expo- sure to room level fluorescent lighting will also cause erasure.
2716 – 2716 16K EPROM Datasheet
An opaque coating paint, tape, label, etc. The distance from lamp to unit should be maintained at 1 inch.
Full text of ” IC Datasheet: Table II shows the eprok programming modes. Program Inhibit Mode The program inhibit mode allows programming several MMES simultaneously with different data for each one by controlling which ones receive the program pulse. These are shown in Table I. Transition times S 20 ns unless noted otherwise.
Multiple pulses are not needed but will not cause device damage.
No pins should be left open. Programmers, components, and system designs have been erroneously suspected when incom- plete erasure was the basic problem. A new pattern can then be written into the device by following the programming procedure. This is done 8 bits a byte at a time.
All similar inputs of the MME may be par- alleled.
Direct sunlight any intense light can cause temporary functional fail- ure due to generation of photo current. Lamps lose intensity as they age.
An erasure system should be calibrated periodically. The MME to be erased should be placed 1 inch away from the lamp and no filters should be used. Any individual address, a sequence of addresses, or addresses chosen at random may be programmed. Program Verify Mode The programming of the MME may be verified either 1 word at a eptom during the programming as shown in the timing diagram or by reading all of the words out at the end of the programming sequence.
The UV content of sunlight may cause a partial erasure of some bits in a relatively short period of time.
Search the history of over billion web pages on the Internet. Capacitance Is guaranteed by periodic testing. All input eprpm levels, including the program pulse on chip-enable are TTL compatible. Except for “Operating Temperature Range” they are not meant to imply that the devices should be operated at these limits.
All bits will be at a “1” level output high in this initial state and after any full erasure. The programming sequence is: MMES may be programmed in parallel with the same data in this mode. When a lamp is changed, the distance is changed, or the lamp is aged, the system should be checked to make certain full erasure is occurring.
The table of “Electrical Characteristics” provides conditions for actual device operation.