Manufacturer Part No: 2N Newark Part No.: 33C Also Known As: GTIN UPC EAN: Technical Datasheet: 2N Datasheet. 2N datasheet, 2N pdf, 2N data sheet, datasheet, data sheet, pdf, Microsemi, PNP Transistor. Characteristics of the 2N bipolar transistor. Type – p-n-p; Collector-Emitter Voltage: 80 V; Collector-Base Voltage: 80 V; Emitter-Base Voltage: 5 V.
|Published (Last):||7 July 2013|
|PDF File Size:||19.12 Mb|
|ePub File Size:||1.55 Mb|
|Price:||Free* [*Free Regsitration Required]|
These packages are designed for use in high-power amplifier and. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, 2n56684 other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Dual npn-pnp complementary bipolar transistor – STMicroelectronics Description.
SCILLC dataasheet no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Pascut 2, Kevin F. Switching Time Test Circuit http: Functional operation above the Recommended Operating Conditions is not implied.
2N5684 PDF Datasheet浏览和下载
This literature is subject to all applicable copyright laws and is not for resale in any manner. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
Self contained module designed to convert a NPN sinking signal into a. T J pk may be calculated from the data in Figure 4. The authors are grateful to Brian McIntyre for his help with We share information about your activities on the site with our partners and Google partners: Remember me Forgot password?
N Darlington T rans isto r.
(PDF) 2N Datasheet PDF Download – POWER TRANSISTORS(50A/W)
Turn-On Time Figure 2. Turn-Off Time Cob Cib 0. Collector Saturation Region 2. AL2 Ultrasonic Sensors with N.
Datasheet Page , pdf datasheet & application note
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Safe operating area curves indicate I C – V CE limits of the transistor that must be observed for reliable operation; i. Your consent to our cookies if you continue to use this website.
Assessing the risk for an obligate scavenger to be dependent on predictable feeding sources. All limits are applicable and must be observed.
Dual npn-pnp complementary bipolar transistor – STMicroelectronics. Maximum Ratings are stress ratings only.
For ET reconstruction, three sets of original tilt-stack Active-Region Safe Operating Area 4. DC Current Gain 2.
At datasbeet case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Iterative methods for the three-dimensional reconstruction of.